Ռադիոֆիզիկայի ֆակուլտետ
Faculty of Radiophysics
The Faculty was established in June 1975 by decision of Armenian Government (USSR era) aiming to meet growing demand in radiophysicist in military, industrial, high technology and R&D sectors of the plan - economy.:
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Arpine K. Simonyan

Junior Researcher | Chair of Semiconductor and Microelectronics
Education
2001-2005 Graduated from Yerevan State University, Dept. of Radiophysics
2001-2005 Specialization: Radiophysics and Electronics
Qualification: Physics of Semiconductors and Microelectronics
2005-2007 Master of Science at Yerevan State University, Dept. of Radiophysics.
2013 PhD of Physics

Status/Title
PhD of Physics, Scientist

Research and Work Experience
2007- up to now Scientist at Dept. of Physics of Semiconductors and Microelectronics
2011- 2012 Armenian National Science and Education Found (ANSEF), 2011.

Main Research Interests/ Expertise
  • Physics of Semiconductors and Microelectronics
  • Thin Films Technology

    Current research interests
  • Computational Nanoscience and Technology

    Conferences participated, scientific trips
  • The 7th International Conference of Semiconductor Micro- and Nanoelectronics, Tsakhcadzor, Armenia, July 3-5, 2009
  • The 8th International Conference of Semiconductor Micro- and Nanoelectronics, Yerevan, Armenia, 2011.
  • The 9th International Conference of Semiconductor Micro- and Nanoelectronics, Yerevan, Armenia, 2013.

    Poster Presentation
  • Joint ICTP-FANAS Conference on TRENDS IN NANOTRIBOLOGY, 12 - 16 September 2011, Miramare, Trieste, Italy

    Language skills
    Fluent in English, Russian and Armenian.
    a.simonyan@ysu.am

  • Competing nucleation of islands and nanopits in zinc-blend III-nitride quaternary material system
    2016 | Article
    Journal of Physics: Conference Series. 2016, 151, 012009 (4 pages)
    Nanostructures Growth Features in GaInAlN Quasiternary Material System
    2015 | Article
    The Tenth International Conference on Semiconductor Micro- and Nanoelectronics, 2015-09-11, 101-103 pp.
    |
    Theoretical study of quantum dots distribution function and the process of nucleation during Ostwald ripening in InAsSbP system
    2013 | Article
    Journal of Contemporary Physics, vol. 48, issue 5, 2013, pp. 220-224
    Quantitative Analysing of InAsSbP Quantum Dots Size Distribution at Ostwald Ripening on InAs(100) substrate
    2013 | Article
    International Conference of Semiconductor Micro- and Nanoelectronics, Yerevan, Armenia, 2013, p.p. 120-122
    GaAsSbP Quasiternary Material System: Nanostructures Growth Features and Immiscibility Analysis
    2012 | Article
    Armenian Journal of Physics, vol. 5, issue 3, 2012,pp 156-163
    Growth Features and Competing Nucleation of Quantum Dots-Nanopits Cooperative Structures in SiGeC Ternary System
    2012 | Article
    Journal of Contemporary Physics, vol. 47, No 4, 2012, p.p. 173-180
    Growth Features and Competing Nucleation of Quantum Dots-Nanopits Cooperative Structures in SiGeC Ternary System
    2011 | Article
    International Conference of Semiconductor Micro- and Nanoelectronics, Yerevan, Armenia, 2011, p.p. 201-204
    Nucleation mechanism of strain-induced InAsSbP quantum dots and pits at liquid phase epitaxy on InAs(100) substrate
    2009 | Article
    “Semiconductor micro- and nanoelectronics”, Proceedings of the 7th International Conference, Tsakhcadzor, Armenia, July 3-5, 2009, p.p. 164-167
    Nucleation mechanism of strain-induced InAsSbP quantum dots and pits at liquid phase epitaxy on InAs(100) substrate
    2009 | Article
    Armenian Journal of Physics, v. 2, issue 4, 2009, p.p. 268-273.
    |
    K.M. Gambaryan , V.M. Aroutiounian, A.K. Simonyan , T. Boeck
    Shape Transition of Strain-Induced InAsSbP Islands at Liquid-Phase Epitaxy on InAs(100) Substrate: From Pyramid to Semi-globe
    2008 | Article
    Armenian Journal of Physics, vol. 1, issue 3, 2008, p.p. 208-218