Ռադիոֆիզիկայի ֆակուլտետ
Faculty of Radiophysics
The Faculty was established in June 1975 by decision of Armenian Government (USSR era) aiming to meet growing demand in radiophysicist in military, industrial, high technology and R&D sectors of the plan - economy.:
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Gagik A. Avetisyan

Assistant | Chair of Wave Process Theory and Physics
Educational Background
1975 - 1980 Graduated from Yerevan State University, Faculty of Radiophysics, Specialization: Theoretical physics, Qualification: Physicist

Research and Work Experience
(In Chronological Order)
2001 - up to now Lecturer at Wave Processes Theory and Physics Chair of Radiophysics Faculty of Yerevan State University
1986 - 2001 assistent professor of Radiophysics faculty, YSU
1983 - 1986 senior laboratory assistent of Radiophysics faculty, YSU
1980 - 1983 laboratory assistent of Radiophysics faculty, YSU

Academic courses/Teaching &Training Experiences
Vector and Tensor Analysis, Atomic and Nuclear Physics, Solution of radiophysics problems on PC,

Main Research Interests/ Expertise
Semiconductors
Biophysics

Current research interests:
The noise in SiC mixtures
The noise in biosensors

Language skills:
Native in Armenian, Fluent in Russian, and English with dictionary.

Other skills
Armenian kitchen master

Other Interests
Music and painting

Буниатян В. В., Петросян О. А., Аветисян Г. А. , Тамразян А. А.
Динамические характеристики карбид-кремниевых полевых транзисторов с барьером Шоткии
2010 | Article
ГИУА , Вестник, выпуск 13, т2, 2010, стр.18-30
Buniatyan V. V., Avetisyan G. A.
Conductance and traus conductaucs of sic Shottky barrier mesfeets
2007 | Article
With the deep impurity levels and traps. Procesdings of EAA N1 2007,122-127
Բունիաթյան Վ. Վ., Միքայելյան Հ. Ա., Ավետիսյան Գ. Ա.
Խառնուրդային խորը և կպչուն մակարդակներ պարունակող սիլիցիում – կարբիտային դաշտային տրանզիստորի հաղորդականությունը
2006 | Article
ԵՊՃՀ Տեղեկագիր 1 էջ 120-126, 2006թ.
Buniatyan V. V., Avetisyan G. A.
A new model of noise characteristics of sic Shottky barrier mesfets
2006 | Article
Procesdings of EAA N1 2006, 146-152.
Avetisyan G. A. , Mikaelyan H. A., Sagatelyan K. V.
Temperature dependences of I – V characteristics of sic mesfets with deep impurity levels and traps
2005 | Article
2005, Semiconductor micro_and nanoelectronics proceedings of the fifth international conference. 66-69. Agveran, september 16-18.
О двух моделях пионного конденсата
1985 | Article
ЕГУ Уч. записки 1985, т.3 ст. 60-63.