Faculty of Radiophysics

Ռադիոֆիզիկայի ֆակուլտետ

The Faculty was established in June 1975 by decision of Armenian Government (USSR era) aiming to meet growing demand in radiophysicist in military, industrial, high technology and R&D sectors of the plan - economy.:

Slavik V. Melkonyan

Professor | Chair of Semiconductor and Microelectronics

Status / Title
Doctor of Sciences (Physics), Professor

Main Research Interests / Expertise
Fluctuations phenomena in semiconductor materials and devices
Surface phenomena

Current research interests
Mobility fluctuations

Educational Background
1975 - 1980 Graduated from Yerevan State University, Dept. of Physics of Semiconductors & Microelectronics, Faculty of Radiophysics
Specialization - Radiophysics and Electronics
Qualification - Radiophysicist
1982 - 1986 - Post Graduate Study at Yerevan State University, Dept. of Physics of Semiconductors & Microelectronics
1990 Candidate of Phys.l-Math. Sciences (Dr. of Physics), “Analysis of Noise in p+nn+ Structures Based on Semiconductor Compensated by Deep Levels”,
1991 Institute of Radiophysics and Electronics of National Academy of Sciences of Armenia
2007 Doctor of Sciences (Physics), “Phonon Equilibrium 1/f-Fluctuations of Electron Lattice Mobility in Homogeneous Semiconductors”, Yerevan State University

Research and Work Experience
1980 - 2006 Research Scientist at Department of Physics of Semiconductors & Microelectronics, Yerevan State University
2007 - up to now Prof. of Department of Physics of Semiconductors & Microelectronics, Yerevan State University

Academic courses/Teaching &Training Experiences
2007 - up to now Yerevan State University: Physics of Semiconductors; Transport Phenomena in Semiconductors; Fluctuation Phenomena in Semiconductors; Optical Properties of Semiconductors; Introduction in Solid State Theory, Physics of Crystalline Dielectrics, Semiconductor Heterojunctions

smelkonyan@ysu.am

S. V. Melkonyan

On the theory of intravalley Raman scattering in intrinsic graphene

2017 | Article

11th International Conference on Semiconductor Micro- and Nanoelectronics (ICSMNE 2017). p. 9-13

T. A. Zalinyan, S. V. Melkonyan

Electron lattice mobility fluctuations in equilibrium semiconductors

2017 | Article

11th International Conference on Semiconductor Micro- and Nanoelectronics (ICSMNE 2017). p. 14-18

Ս. Վ. Մելքոնյան

Կիսահաղորդիչների օպտիկայի հիմունքներ

2015 | Book

Ուս. ձեռնարկ: ԵՊՀ հրատ., 2015թ․, 155 էջ

S. V. Melkonyan

Non-Gaussian conductivity fluctuations in semiconductors

2010 | Article

Physica B, v. 405, N1, 2010, 379-385

S.V. Melkonyan , A. V. Surmalyan

Features of the electron mobility variance in homopolar semiconductors

2010 | Article

Journal of Contemporary. Physics (Armenian Academy of Sciences), v. 45, N6, 2010, 286-290

S. V. Melkonyan , A. P. Hakhoyan

Features of the refractive index of porous silicon with gradient porosity

2008 | Article

Armenian Journal of Physics, v. 1, 2008, 146-150

S. V. Melkonyan

On the low-frequency limit of the Schonfeld pulse 1/f-law

2008 | Article

Physica B, v. 403, N12, 2008, 2029-2035

S. V. Melkonyan , F. V. Gasparyan

Main sources of electron mobility fluctuations in semiconductors

2007 | Article

Noise and Fluctuations in Circuits, Devices and Materials; Ed. by Massimo Macucci, Lode K. Vandamme, Carmine Ciofi, Michael B. Weissman; Proc. of SPIE v.6600, 2007, 66001K-1 - 66001K-8.

Haroutiunian V.M , Adamyan Z.N , Barseghyan R.S, Semerjyan B. O , Melkonyan S.V

Photosensitive structures Based on Silicon Having Deep Centers, which Have Been Irradiated with Streams of Fast Electrons

1992 | Thesis

Proceedings of the IV International Meeting on Sensors (Eurosensors VI). -1992.-San-Sebastian, Spain, p. 1

Arutyunyan V.M , Adamyan Z.N. , Barsegyan R.S, Semerdzhyan В.O. , Melkonyan R.A.

Photosensitive structures based on silicon having deep centers, which have been irradiated with streams of fast electrons

1990 | Article

Soviet Journal of Contemporary Physics (Armenian Academy of Sciences) (Izvestija Akademii Nauk Armyanskoi SSR, Fizika). 1990. v.25, issue 1. Allerton Press Inc, p. 6

M. H. Azaryan , V. M. Harytynyan , Z. N. Adamyan , R. S. Barseghyan, F. V. Gasparyan , B. O. Semergian, Z. H. Mchitaryan, S.V.Melkonyan

Fenomena in Silicon Photodiodes Doped with Zn and S

1986 | Article

Infrared Pysics,1986, 26,5,p.267-272

Haroutiunian V.M. , Adamyan Z.N. , Barseghyan R.S., Semerjyan B. O , Gasparyan F.V , Azaryan M.H , Mkhitaryan Z.H, Melkonyan S.V.

Phenomena in Silicon Photodiodes Doped with Zn and S

1986 | Article

Proceedings of the III International Conference on Infrared Physics (CIRP3). Infrared Physics. - 1986. - Vol.26, N5, p. 6