Ռադիոֆիզիկայի ֆակուլտետ
Faculty of Radiophysics
The Faculty was established in June 1975 by decision of Armenian Government (USSR era) aiming to meet growing demand in radiophysicist in military, industrial, high technology and R&D sectors of the plan - economy.:
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Slavik V. Melkonyan

Professor | Chair of Semiconductor and Microelectronics
Status / Title
Doctor of Sciences (Physics), Professor

Main Research Interests / Expertise
Fluctuations phenomena in semiconductor materials and devices
Surface phenomena

Current research interests
Mobility fluctuations

Educational Background
1975 - 1980 Graduated from Yerevan State University, Dept. of Physics of Semiconductors & Microelectronics, Faculty of Radiophysics
Specialization - Radiophysics and Electronics
Qualification - Radiophysicist
1982 - 1986 - Post Graduate Study at Yerevan State University, Dept. of Physics of Semiconductors & Microelectronics
1990 Candidate of Phys.l-Math. Sciences (Dr. of Physics), “Analysis of Noise in p+nn+ Structures Based on Semiconductor Compensated by Deep Levels”,
1991 Institute of Radiophysics and Electronics of National Academy of Sciences of Armenia
2007 Doctor of Sciences (Physics), “Phonon Equilibrium 1/f-Fluctuations of Electron Lattice Mobility in Homogeneous Semiconductors”, Yerevan State University

Research and Work Experience
1980 - 2006 Research Scientist at Department of Physics of Semiconductors & Microelectronics, Yerevan State University
2007 - up to now Prof. of Department of Physics of Semiconductors & Microelectronics, Yerevan State University

Academic courses/Teaching &Training Experiences
2007 - up to now Yerevan State University: Physics of Semiconductors; Transport Phenomena in Semiconductors; Fluctuation Phenomena in Semiconductors; Optical Properties of Semiconductors; Introduction in Solid State Theory, Physics of Crystalline Dielectrics, Semiconductor Heterojunctions

smelkonyan@ysu.am

On the theory of intravalley Raman scattering in intrinsic graphene
2017 | Article
11th International Conference on Semiconductor Micro- and Nanoelectronics (ICSMNE 2017). p. 9-13
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T. A. Zalinyan, S. V. Melkonyan
Electron lattice mobility fluctuations in equilibrium semiconductors
2017 | Article
11th International Conference on Semiconductor Micro- and Nanoelectronics (ICSMNE 2017). p. 14-18
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Կիսահաղորդիչների օպտիկայի հիմունքներ
2015 | Book
Ուս. ձեռնարկ: ԵՊՀ հրատ., 2015թ․, 155 էջ
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Non-Gaussian conductivity fluctuations in semiconductors
2010 | Article
Physica B, v. 405, N1, 2010, 379-385
S.V. Melkonyan , A. V. Surmalyan
Features of the electron mobility variance in homopolar semiconductors
2010 | Article
Journal of Contemporary. Physics (Armenian Academy of Sciences), v. 45, N6, 2010, 286-290
S. V. Melkonyan , A. P. Hakhoyan
Features of the refractive index of porous silicon with gradient porosity
2008 | Article
Armenian Journal of Physics, v. 1, 2008, 146-150
On the low-frequency limit of the Schonfeld pulse 1/f-law
2008 | Article
Physica B, v. 403, N12, 2008, 2029-2035
Main sources of electron mobility fluctuations in semiconductors
2007 | Article
Noise and Fluctuations in Circuits, Devices and Materials; Ed. by Massimo Macucci, Lode K. Vandamme, Carmine Ciofi, Michael B. Weissman; Proc. of SPIE v.6600, 2007, 66001K-1 - 66001K-8.
Photosensitive structures Based on Silicon Having Deep Centers, which Have Been Irradiated with Streams of Fast Electrons
1992 | Thesis
Proceedings of the IV International Meeting on Sensors (Eurosensors VI). -1992.-San-Sebastian, Spain, p. 1
Photosensitive structures based on silicon having deep centers, which have been irradiated with streams of fast electrons
1990 | Article
Soviet Journal of Contemporary Physics (Armenian Academy of Sciences) (Izvestija Akademii Nauk Armyanskoi SSR, Fizika). 1990. v.25, issue 1. Allerton Press Inc, p. 6
M. H. Azaryan , V. M. Harytynyan , Z. N. Adamyan , R. S. Barseghyan, F. V. Gasparyan , B. O. Semergian, Z. H. Mchitaryan, S.V.Melkonyan
Fenomena in Silicon Photodiodes Doped with Zn and S
1986 | Article
Infrared Pysics,1986, 26,5,p.267-272
Phenomena in Silicon Photodiodes Doped with Zn and S
1986 | Article
Proceedings of the III International Conference on Infrared Physics (CIRP3). Infrared Physics. - 1986. - Vol.26, N5, p. 6

Contacts
Contacts:

Dean - Associate Member of NAS RA
Yuri Vardanyan

Dean's Office: (+374 60) 71-03-02
(inner line 23-02),
radiophys@ysu.am