Infrastructure | Scientific Centres

Center of Semiconductor Devices and Nanotechnologies
Problem Laboratory has been based in 1959. Since November, 2007 the Laboratory is called “Center of Semiconductor Devices and Nanotechnologies”:

Area: Semiconductor Physics

The main research fields are

  • In the Center theoretical and experimental research works are carried out on development and manufacturing of high-sensitivity and selective sensors of different gases, solar energy converters to chemical energy of hydrogen, the photodetectors, new semiconductor devices made of porous and nanostructures, liquid crystal optical devices,
  • Development and manufacturing of converters of radiant energy, sensors of different gases, biological nanostructure sensors and other devices made of metal oxide semiconductors and multicomponent compounds (state base financing),
  • Development of industrial prototype spectrapolarimeter for medical use based on liquid crystal polarization diffraction grating (ISTC, A-1951):


Nowdays the main task is to create nanostructures with given parameters and sizes, the solving of which can bring the new tendences in electronics, material science, mechanics, chemistry, medicine and biology. The nanosize systems, where the active regions of semiconductor devices are decreased up to nanometer sizes, the ones are considered as semiconductor materials of new classes. In modern science, the important conquestion are the investigation of carbon nanotubes, which have perfect conductivity because of their supersmall sizes, high emission characteristics and porousity. They will be applied in different measure devices, electronics, nanoelectronics and so on. The structures with quantum dots and pits, which can be applied in such devices as solar energy systems to increase the efficienty electrical energy switchers by thermal ray, infrared ray sensors and so on. The appling of thin films with nanosize grains can bring to create different gas sensors with higher selectivity, multisensor systems and biological sensors. It is known, that the above mentioned tendences are actual and besides scientific interest they are also valuable from practical point of view, because it is planned that a large amount of work will end by creation of sample devices.

Objectives and problems

    • There are planning to synthesize Fe2O3•ZnO, ZrO2•Fe2O3, ZnO•SnO2, Nb2O5•SnO2, In2O3•SnO2•TiO2•Ga2O3 semiconductor metal oxide compounds using solid state reaction and get thin filme gas sensors by RF magnetron sputtering. There are olso planning to get thin films on metal titan from the above mentioned compounds and study their applying in the solar energy photoelectrochemical switchers as photon annihilation,
    • To create high performance gas sensors and sensors array with.carbon nanotubs and nanocomposed metal oxide,
    • It is planning to develop tick film nanocomposite hybrid structure sol gel technology based on metal oxide nanoparticle and single well and mulit well carbon nanotubes,
    • There are planning to realize cryogen effective gas sensors which are sensitive to different gases based on the above mentioned materials,
    • There are planning to grow InAsSbP quasiternary spherical, rings and ellipsoidal QD’s in InAs(100) substrate using liquid phase epitaxy and study their growth technological conditions, also the morphological dependence of that nanostructures on growth technological conditions,
    • There will study Ostwald’s ripening process during the nucleation of quantum dots. The critical size of QD’s will determined when the spherical quantum dot changes to ellipsoidal during Ostwald’s ripening,
    • There are planning to create mid infrared photodetectors based on that nanostructures and study their current-voltage and capacity-voltage characteristics, as well as the magnetic properties at 77 K temperature,
    • According continuum elasticity model and thermodynamic principle the phase diagrams, immiscibility gaps dependences on temperature of GaAs-GaSb-GaP, InAs-InSb-InP և Si-Ge-C quasiternary and ternary solid solution compounds as well as the kinetics of nucleation of quantum dot-pit structures will be investigated,
    • The work will began to write and investigate polarizing diffraction lattices based on semiconductor-liquid structures. The creation technology of the above mentioned lattices will be developed and the diffraction efficiency of polarizing diffraction lattices will be measured,
    • The dependence of electrons mobility dispersion singularity on electrical field in cases strong and low fields will be investigated.

Technical capacity

  • Electro-liquid epitaxy СВЕТ-3 equipment,
  • High and midle-temperature electric furnaces НТ04/16, СУОУЛ,
  • Diffusion furnaces РЕПИД-1,
  • Vacuum УВН-2, ВУП-5 and electro УЛМЗ-279.040 ion beam evaporation equipment,
  • RF magnetron evaporation МБ-05 setup,
  • Photolithography installation R404/88 equipment,
  • CVD,
  • Spectrophotometers SPM-2, КСВУ-23 and ИКС-21,
  • Optical monochromators PT-405.

Internatioanl collaboration 

  • Saclay Nuclear Research Centre, Paris, French,
  • University of Washington USA,
  • Beam Engineering for Advanced Measurements Co USA, South Orlando,
  • Institute of Crystal Growth, Berlin, Germany,
  • Institute of Phys. of Semiconductors DAW, Berlin, Germany,
  • Institute of Szeged, Hungary,
  • Tyndall National Institute at University-Collage in Cork, Ireland ,
  • Aachen University of Julich, Germany,


      • A-322 - Theoretical and experimental investigations of porous and oxide semiconductors and their interfaces with electrolyte or gas. Development and manufacture of gas sensors and high efficient photoconverters of solar energy into electricity or chemical energy based on such materials (2001-2004),
      • А-321 - Investigations of optical and photoelectric properties of the semiconductor - liquid crystal interface (2001-2004),
      • PS-53 - Theoretical and experimental investigations of 1/f noise in semiconductors (2003),
      • 04-PS-cheminorg-728-25 - New semiconductor photocatalysts for photoelectrochemical converters of solar energy (2004),
      • 04-PS-elec-716-9 - Theory of two-dimensional electron gas field-effect transistor (2004),
      • AEO-10829-YE-3 Hydrogen sensors (2004),
      • ARP2-10831-YE-04/AAT-4-44224-01 Lattice matched low bandgap III-V ternary heterostructure for thermophotovoltaic applications (2004-2006),
      • A-1232 - Synthesis and investigations of binary and multicomponent metal-oxide semiconductors for manufacture of chemical nanosensors and electronic nose arrays for monitoring of different toxic gases in environment and civilian defense (2006-2009),
      • CGP ARP2-2678-YE-05 - Phonons interface percolation dynamics and 1/f noise in semiconductor micro- and opto- electronic devices; applications in Noise Diagnostics and Sensing (2006-2008),
      • IPP/ISTC A-1957 Project (2011-2013):

Head of the Center
Vladimir M. Aroutiounian, Professor, Doctor of Physics, Member of National Acad. Sci. Armenia and International Engineering Academy of Science,
Valeri M. Arakelyan, PhD of Physics, Executive Director of Center:


Zaven N. Adamyan, PhD of Physics, Senior scientist,
Mikayel H. Azaryan, PhD of Physics, Senior scientist,
Hakob L. Margaryan, PhD of Physics, Senior scientist,
Artyom Y. Vahanyan, Doctor of Physics, Senior scientist,
Ferdinand V. Gasparyan, Professor, Doctor of Physics, Senior scientist,
Karen M. Ghambaryan, Doctor of Physics, Associate professor, Senior scientist,
Slavik V. Melkonyan, Doctor of Physics, Senior scientist,
Mikayel S. Aleksanyan, PhD of Physics, Scientist, lecturer, Head of laboratory of Physics of Semiconductors and Microelectronics,
Artsrun H. Arakelyan, PhD of Physics, Scientist,
Vardan G. Harutyunyan, PhD of Physics, Scientist,
Gnel M. Stepanyan, Scientist,
Gohar E. Shahnazaryan, Scientist,
Emma A. Khachaturyan, Junior scientist,
Margarita S. Kazaryan, Junior scientist,
Babken O. Semerjyan, Scientist,
Arpine K. Simonyan, PhD of Physics, Junior scientist,
Nune H. Hakobyan, Senior engineer,
Gayane M. Mamikonyan, Senior engineer,
Haykaz L. Topchyan, Technician,
Haykanush R. Hovhannisyan, lab. Assistant

Tel.: (+374 60) 710315, 23-15 (inner line)
Fax: (+374 10) 555590

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