Ferdinand V. Gasparyan
Biography
Status/Title
Doctor of Phys. Math. Sciences, Professor

Main Research Interests/ Expertise
Theory of the double injection currents in the compensated semiconductors
Ultraviolet and infrared photodiodes,
Solar cells,
Fluctuation phenomena in semiconductors

Current research interests
Bio-)Chemical sensors on the base of Electrolyte - Insulator - Semiconductor structures,
Low frequency noises in Semiconductors and Semiconductor Devices,
Low frequency noises in nanoscale structures

Educational Background
1967 - 1972 - Yerevan Polytechnic Institute, Department of Cybernetics, student,
1972 - Master of Science (Engineer of Electron Techniques) Thesis topic: “Photoelectrical Characteristics and Noises of Metal-Oxide-Semiconductor
(MOS)-transistors”, Department of Cybernetics, Yerevan Polytechnic Institute, Yerevan, Armenia,
1981 - Candidate (Physics of Semiconductors and Dielectrics) Dissertation topic: “Photoelectrical Amplification, Static, Small-Signal and Noises
Characteristics of Double Injection Structures on the Base of Compensated Semiconductors”, Institute of Physics, Baku,
National Academy of Sciences of Azerbaijan.
1995 - Doctor of Science (Solid State Physics). Dissertation topic, “Physical Phenomena in Double Injection Structures on the Base of Compensated Semiconductors”, Institute of Applied Problems of Physics, National Academy of Sciences of Armenia

Research and Work Experience
1972 - 1974 - Engineer, Research Scientist, Institute of Radiophysics and Electronics, National Academy of Sciences of Armenia, Ashtarak, Armenia,
1974 - 1978 - Post Graduate, Institute of Radiophysics and Electronics, National Academy of Sciences of Armenia, Ashtarak, Armenia,
1978 - 1986 - Senior Research Scientist, Scientific Laboratory of Semiconductor Materials and Devices, Department of Physics of Semiconductors and Dielectrics, Yerevan State University, Yerevan, Armenia,
1996 - 2000 - Head of the Chair, Yerevan State University, Idjevan Brench,
1986 - 2000 - Associate Professor, Yerevan State University, Department of Physics of Semiconductors and microelectronics, Yerevan, Armenia,
2000-till now. Full Professor, Yerevan State University, Department of Physics of Semiconductors and microelectronics, Yerevan, Armenia,
1994 - June, Trieste, Italy,
1996 - May-June, ICTP, Trieste, Italy,
2004 - June-July, Institute of Electron Structures, Heraklion, Crete, Greece,
2007 - April-May, The Gorge Washington University, Washington DC, U.S.A.,
2008 - June-August, University of Applied Sciences Aachen, Ginsterweg 1, Germany, Research Centre Juelich, Institute of Bio- and Nanosystems, Juelich, Germany
2013 - June-August, University of Applied Sciences Aachen, Ginsterweg 1, Germany, Research Centre Juelich, Institute of Bio- and Nanosystems, Juelich, Germany

Academic courses/Teaching &Training Experiences
1986-till now. Yerevan state University: Solid State Physics, Renewable Energy Sources, Crystallography, Optoelectronics, Infrared and Ultraviolet detectors, lectures.
2003 - 2005 - State Engineering University of Armenia: Crystallography.
2004 - 2006 - Russian-Armenian University: Crystallography, lecture.
2006 till now, “Synopsis-Armenia”, Optoelectronics

Awards, Honors
1975 - Award “For the Best Yang Scientist”. Institute of Radiophysics and Electronics (National Academy of Sciences of Armenia),
1977 - Award “For the Best Theoretical Work”. Institute of Radiophysics and Electronics (National Academy of Sciences of Armenia),
2006 - Armenian National Academy Award for “Organization of International Conferences “Semiconductor Micro- and Nano-Electronics”,
2010 - Gold medal of the Yerevan State University devote 35 anniversary of the Faculty of Radiophysics

Professional activities
Session Chair, “Chaos in Condensed Matters” ICTP workshop, Trieste, Italy (1995),
Session Chair, “Chaos in Condensed Matters” ICTP workshop, Trieste, Italy (1997),
Organizer and Session Chair, “Semiconductor Micro- and Nano-Electronics” International Conferences:
-1997, Dilijan, Armenia, May 1997
-1999, Dilijan, Armenia, May 1999
-2001, Sevan, Armenia, September, 2001
-2003, Tsachkadzor, Armenia, June, 2003
-2005, Agveran, Armenia, September, 2005
-2007, Tsachkadzor, Armenia, September, 2007
-2009, Tsachkadzor, Armenia, July, 2007

Membership
Member of academic council of the faculty of Radiophysics of Yerevan State university since 1995,
Chair of Expert Commission of the faculty of Radiophysics of Yerevan State university since 1995,
Expert for the journal “Proceedings of National Academy of Sciences of Armenia. Physics” since 2000,
Expert in Armenian National Scientific and Technical Thematic Financing Projects presents by the Ministry of Education and Sciences of Armenia since 2001

Language skills
Armenian - Excellent, Russian and english - Fluent

Ferdinand V. Gasparyan

Professor | Faculty of Radiophysics - Chair of Semiconductor and Microelectronics
 
 

Book

Gasparyan F. V .

Semiconductor Physics & Principles of Solid State Electronics | PH YSU, Yerevan 2011, 387 pages. (In Armenian)

Gasparyan F., Abrahamian Yu., Martirossyan R.

Methods and Materials for Remote Sensing. Infrared Photo-Detectors, Radiometers and Arrays | 2004, Kluwer Academic Publishers. Boston/Dordrecht/New York/London, 2004, 160 pages

Gasparyan F. V., Abrahamian Ju. A.

Threshold characteristics of the photodetectors, IR radiometers and main materials for modern photoelectronics | PH Yerevan State University, Yerevan, 2000, 153 pages, (In Russian)

Gasparyan F. V., Adamyan Z. N., Aroutyunyan V. M.

Silicon Photodetectors | PH Yerevan State University, 1989, 362 pages, (In Russian)

Gasparyan F. V., Arutyunyan V. M., Adamyan Z. N.

Photodetectors: Past, Present, Future | PH “Hayastan”, Yerevan, 1986, 231 pages, (In Armenian)

Gasparyan F. V., Arutyunyan V. M.

Problems of the modern microelectronics: Charge Coupled Devices | PH NAS Republic of Armenia, Yerevan, 1986, 160 pages (In Armenian)
 

Article

Lusine Gasparyan, Ilya Mazo, Vahan Simonyan, Ferdinand Gasparyan

Noises and Signal-to-Noise Ratio of Nanosize EIS and ISFET Biosensors | Open Journal of Biophysics, 2020, 10, 1, 1-12 էջ

F. Gasparyan, N. Boichuk, S. Vitusevich

Activation–relaxation processes and related effects in quantum conductance of molecular junctions | Nanotechnology, 2020, 31, 4, 045001(1-7) էջ

L. F. Gasparyan, A. Mazo, V. Simonyan, F. V. Gasparyan

EIS Biosensor for Detection of Low Concentration DNA Molecules | Journal of Contemporary Physics (Armenian Academy of Sciences), 2020, 55, 1, 101-109 էջ

L.F. Gasparyan, I. A. Mazo, V. V. Simonyan, F. V. Gasparyan

Study of Molecular Junctions Metal–DNA–Metal for the DNA Sequencing | Journal of Contemporary Physics (Armenian Academy of Sciences), 2020, 55, 1, 77-86 էջ

Lusine Gasparyan, Ilya Mazo, Ferdinand Gasparyan, Vahan Simonyan

DNA Sequencing Modified Method through Effective Regulation of Its Translocation Speed in Aqueous Solution | Open Journal of Biophysics, 2020, 10, 2, 96-112 էջ

F. Gasparyan, L. Gasparyan, I. Mazo, V. Simonyan

ISFET Based DNA Sensor: Current-Voltage Characteristic and Sensitivity to DNA Molecules | Open Journal of Biophysics, 9, 4, 239-253 pp. |

Ferdinand Gasparyan, Ihor Zadorozhny, Hrant Khondkaryan, Armen Arakelyan, Svetlana Vitusevich

Photoconductivity, pH Sensitivity, Noise, and Channel Length Effects in Si Nanowire FET Sensors | Nanoscale Research Letters, 2018, 13, 1, 87-95 pp. |

Ferdinand Gasparyan, Volodymyr Handziuk, Lode K J Vandamme, Maristella Coppola, Viktor Sydoruk, Mykhailo Petrychuk, Dirk Mayer, Svetlana Vitusevich

Noise spectroscopy of tunable nanoconstrictions: molecule-free and molecule-modified | Nanotechnology, 2018, Vol. 29, Issue 38, 385704 (1-12) pp. |

Ф. Гаспарян

Электрические шумы в тонких металлических проволоках | Известия НАН РА. Физика (Journal of Contemporary Physics (Armenian Academy of Sciences), 2018, т. 53, №4, 501-511 էջ

F.V. Gasparyan

Electrical Noises in Thin Metal Wires | Journal of Contemporary Physics (Armenian Academy of Sciences), 2018, Vol. 53, No 4, 376–383 էջ

F. Gasparyan, I. Zadorozhnyi, H. Khondkaryan, A. Arakelyan, S. Vitusevich

Biochemical sensors based on silicon nanoribbon FETs Part 1: Samples Fabrication, CVCs, pH-sensitivity | Semiconductor Micro- and Nanoelectronics. The 11th Int. Conference. 2017, p. 95-98 |

F. Gasparyan, V. Handziuk, M. Coppola, V. Sudoruk, D. Mayer, S. Vitusevich

Noise Characterization of Molecular Junctions | 24th International Conference on Noise and Fluctuations. 2017, p. 1-4 |

F. Gasparyan, I. Zadorozhnyi, H. Khondkaryan, A. Arakelyan, S. Vitusevich

Biochemical Sensors Based on Silicon Nanoribbon FETs. Part 2: Low-frequency noise and size-dependent effects | Semiconductor Micro- and Nanoelectronics.The 11th Int. Conference. 2017, p. 99-103 |

Ф. Гаспарян

К теории переноса тока в механически управляемых обрывных переходах | Известия НАН РА. Физика. 2017, 52,2, стр. 166-176 |

Hrant Khondkaryan, Armen. Arakelyan, Ferdinand Gasparyan

Optical properties of double-gated silicon nanowire FETs | 4th International Symposium "Optics & its applications". 2016, p. 116 |

Ф. В. Гаспарян

Эффект смещения края поглощения в кремниевой нанопроволоке | Известия НАН РА. Физика. 2016, 51 , N4, 464-470 pp.

F. Gasparyan

Double-gated Si NW FET sensors: Low-frequency noise and photoelectric properties | Journal of Applied Physics. 2016, 120, 064902-(1-9) |

F. V. Gasparyan, A. H. Arakelyan, H. D. Khondkaryan

The Effect of Shifting of the Absorption Edge in the Silicon Nanowire | Journal of Contemporary Physics (Armenian Academy of Sciences). 2016, 51, N4, 345-349 pp. |

F. Gasparyan

Ultraviolet photodetector on the base of silicon nanowires | 10th Int. Conf. Semicond. Micro-. & Nanoelectronics, 2015-09-11, 37-40 pp.

F. V. Gasparyan, H. D. Khondkaryan

Low-frwquency noises and SNR of double gated Si NW ISFET based biochemical sensor | 10th Int. Conf. on Semicond. Micro- & Nanoelectronics, 2015-09-11, 68-71 pp. |

Ф. В. Гаспарян

Низкочастотные шумы контакта металл-полупроводник | Известия НАН РА. Физика, Армения, 2015թ․, 50, 228-236 стр.

F. V. Gasparyan

Low-Frequency Noises in the Metal–Semiconductor Contact | Journal of Contemporary Physics (Armenian Academy of Sciences), Armenia, 2015թ․, 50, 170–176 pp. |

F. V. Gasparyan, V. M. Aroutiounian

Quantum modulation of the channel charge and distributed capacitance of double gated nanosize FETs | Advances in Nano Research, South Korea, 2015, 3.1, 49-54 pp. |

F. Gasparyan

Single trap in liquid gated nanowire FETs: Capture time behavior as a function of current | Journal of Applied Physics, USA, 2015, 117, 174506(1-5) pp. |

Р. В. Оганесян , Г. Д. Хондкарян, М. С. Алексанян, В. М. Аракелян, Б. О Семерджян, В. М. Арутюнян, Ф. В. Гаспарян

Статические и щумовые характеристики нанокомпозитных газовых сенсоров | Известия АН Арм. ССР. Физика. – 2014 г. – Т , 5c.

Gasparyan F. V.

Modified Charge Fluctuation Noise Model for Electrolyte-Insulator-Semiconductor Devices | Mod. Phys. Lett. B (MPLB), 2011, Vol. 25.

Gasparyan F. V., Poghossian A., Vitusevich S. A., Petrychuk M. V., Sydoruk V. A., Siqueira J. R. Jr., Oliveira O. N., Offenhäusser A., Schöning M. J.

Low-Frequency Noise in Field-Effect Devices Functionalized With Dendrimer/Carbon-Nanotube Multilayers | IEEE Sensors Journal, 2011, v.11, #1, 142-149

F.V. Gasparyan, P.A.Varderesyan, B. O. Semerjyan

Low-frequency noise special measurement chamber | Semiconductor micro -and nanoelectronics. Proc. of the Eight International Conference. Yerevan, Armenia, July 1-3 2011,p. 6

Gasparyan F. V.

Excess Noises in (Bio-)Chemical Nanoscale Sensors | Sensors & Transducers journal (ISSN 1726-5479), Vol.122, # 11, 2010, pp.72-84.

Gasparyan F. V.

Low-Frequency Noises in Nanotubes and Nanowires | Armenian Journal of Physics, 2010, vol. 3, # 4, pp. 312-341; http://ajp.asj-oa.am/306/.

Gasparyan F. V.

Low frequency noises in semiconductors, MOS-like structures, gaz sensors and EIS based (bio-)chemical sensors | Proc. on 35 Anniversary of Foundation of Dept. of Radiophysics, Yerevan State University, Yerevan, 2010, pp.53-58

Gasparyan F., Mkhitaryan Z., Surmalyan A.

Low frequency noises of hydrogen sensors | Sensors & Transducers Journal, 2009, v. 104, #5, 58-67

Gasparyan F. V., Mkhitaryan Z. H., Surmalyan A. V.

Low frequency noises of hydrogen sensors on the base of silicon having nano-pores sensitive layer | 20th Int. Conf. on Noise and Fluctuation, June 14-19, 2009, Pisa, Italy, pp.137-140.

Gasparyan F. V., Surmalyan A. V.

Surface potential behavior in ISFET-based bio-(chemical) sensors with two insulator layers in dark and under intensity-modulated irradiation | Proc of 7th Int. Conf. on Semicond. Micro. & Nano-Electron., July 3-5, 2009, Tsakhcadzor, Armenia, pp. 67-70.

Gasparyan F. V .

Modeling and Simulation of Light-Addressable potentiometric Sensors | J. of Contemporary Physics (Armenian Academy of Sciences), 2010, v.45, #5, 228-237

Gasparyan F. V ., Poghossian A., Vitusevich S. A., Petrychuk M. V., Sydoruk V. A., Surmalyan A. V., Siqueira J. R. Jr., Osvaldo N., Oliveira Jr., Offenhäusser A., Schöning M. J.

1/f-noise in EIS bio-sensors functionalized with 3 layer-by-layer PAMAM/single walled carbon nanotubes | Proc. 20th Int. Conf. on Noise and Fluctuation, June 14-19, 2009, Pisa, Italy, pp.133-136.

S. V. Melkonyan, F. V. Gasparyan

Main sources of electron mobility fluctuations in semiconductors | Noise and Fluctuations in Circuits, Devices and Materials; Ed. by Massimo Macucci, Lode K. Vandamme, Carmine Ciofi, Michael B. Weissman; Proc. of SPIE v.6600, 2007, 66001K-1 - 66001K-8.

A. I. Vahanyan, F. V. Gasparyan, V. M. Aroutiounian

Thermoelectric coefficient of the non-homogeneously doped p-n junctions made on Si and Pb0.8Sn0.2Te | Sensors and Actuators A: Physical, v. 113, N3, pp. 370-375, 2004

A. I. Vahanyan, F. V. Gasparyan, V. M. Aroutiounian, Yu. A. Abrahamian

Thermoelectric coefficient of the non-homogeneously doped p-n junctions made on Si and Pb0.8Sn0.2Te | Proc. of EMRS-2003, Strasburg, France, June 10-13

A. I. Vahanyan, Yu. A. Abrahamian, V. A. Vagarshakian, F. V. Gasparian, G. G. Karamian, A. G. Sarkisian, V. I. Stafeev

Some structures for cascade solar cells | Solar energy materials and Solar Cells, v.80, N4, p. 451-457, 2003

Yu. A. Abrahamian, A. I. Vahanyan, F. V. Gasparian, V. A. Vagarshakian, G. G. Karamian, S. G. Martirosian, V. I. Stafeev

High-Sensitive Multielement Line (Matrixes) on the Basis of Field-Effect Transistors With Easily Reproduced Production Technology | Infr.and Mill. v.23,N12,pp1753-1764, 2002

Ю. А. Абрамян, З. Н. Адамян, В. М. Арут‏юнян, Ф. В. Гаспарян, С. Г. Мартиросян, К. Н. Кочарян

Малошумящий высокочувствительный радиометр | Изв. НАН РА и ГИУА, серия Технические науки, 54, 1, 141-147, 2001

A. I. Vahanyan, Ju. A. Abrahamyan, V. M. Aroutiounian, F. V. Gasparyan, E. M. Baghiyan

Semiconductors compounds Pb1-xSnxTe<Cd> with high values of thermoemf | Proc.of the II National Conf. Semiconductor microelectronics, Dilijan, Armenia, May 1999

Арутюнян В.М. , Гаспарян Ф.В, Семерджян Б. О , Барсегян Р.С, Адамян З.Н.

Фотоприемник из компенсированного кремния | Каталог вузовских завершенных научно-исследовательских и опытно-конструкторских разработок, подлежащих внедрению. Мин высш. и средн. спец. образования. Арм. ССР. – 1990, c. 1

M. H. Azaryan, V. M. Harytynyan, Z. N. Adamyan, R. S. Barseghyan, F. V. Gasparyan, B. O. Semergian, Z. H. Mchitaryan, S.V.Melkonyan

Fenomena in Silicon Photodiodes Doped with Zn and S | Infrared Pysics,1986, 26,5,p.267-272

Haroutiunian V.M., Adamyan Z.N., Barseghyan R.S., Semerjyan B. O, Gasparyan F.V, Azaryan M.H, Mkhitaryan Z.H, Melkonyan S.V.

Phenomena in Silicon Photodiodes Doped with Zn and S | Proceedings of the III International Conference on Infrared Physics (CIRP3). Infrared Physics. - 1986. - Vol.26, N5, p. 6

М. Г. Азарян, В. М. Арутюнян, З. Н. Адамян, Р. С. Барсегян, Ф. В. Гаспарян, З. О. Мхитарян

Флуктуационные явления в диодах из компенсированного кремния | Тез.докл.3 Всесоюзной конф. «Флуктуационные явления в физических системах», Вилънюс,1983,с.194-196
 

Thesis

F. Gasparyan, V. Handziuk, L. Vandamme, M. Coppola, V. Sydoruk, M. Petrichuk, D. Mayer, S. Vitusevich

Transport Regimes in Tunable Gold Nanoconstructions: Proposed Solution by Low-Frequency Noise Spectroscopy | 8th International Conference on Unsolved Problems on Noise, UPON 2018. p. 85-86 |

F. Gasparyan, H. Khondkaryan, A. Arakelyan

Low-frequency noises of double-gated SiNW FET under irradiation | 4th International Conference "Nanotechnologies". 2016, p. 102

Ferdinand Gasparyan

UV photodetector on the base of silicon nanowire FET | Optics & its Applications, 2015-10-01, 127 p.